Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction
Crossref DOI link: https://doi.org/10.1007/s11814-017-0279-7
Published Online: 2017-12-07
Published Print: 2018-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shin, Gahyun
Kim, Hong-Yeol
Kim, Jihyun
License valid from 2017-12-07