Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas
Crossref DOI link: https://doi.org/10.1007/s11814-019-0449-x
Published Online: 2020-01-30
Published Print: 2020-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Jun-Hyun
Kim, Chang-Koo
Text and Data Mining valid from 2020-01-30
Version of Record valid from 2020-01-30
Article History
Received: 22 September 2019
Accepted: 1 December 2019
First Online: 30 January 2020