The Effect of Molar Fraction of the Intrinsic Layer on the PIN Structure for Solar Cell Based an Indium Gallium Nitride Using AMPS-1D
Crossref DOI link: https://doi.org/10.1007/s11837-021-04716-9
Published Online: 2021-05-27
Published Print: 2021-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mousli, L. https://orcid.org/0000-0003-2153-7782
Dennai, B.
Azeddine, B.
Text and Data Mining valid from 2021-05-27
Version of Record valid from 2021-05-27
Article History
Received: 5 January 2021
Accepted: 26 April 2021
First Online: 27 May 2021
Conflict of interest
: The authors declare that they have no conflict of interest.