Crossmark

Effects of Zn doping concentration on resistive switching characteristics in Ag /La1−x Zn x MnO 3 / p + $_{3}/\textit {p}^{\mathrm {+}}$ -Si devices

Crossref DOI link: https://doi.org/10.1007/s12034-016-1330-8

Published Online: 2016-12-08

Published Print: 2016-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

YAN, SHUAISHUAI

WANG, HUA

XU, JIWEN

YANG, LING

QIU, WEI

CHEN, QISONG

HAN, DONG
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51262003)

Guangxi Key Laboratory of Information Materials (1110908-10-Z)
License Information

License valid from 2016-12-01