Investigation of capacitance characteristics in metal/high-k semiconductor devices at different parameters and with and without interface state density (traps)
Crossref DOI link: https://doi.org/10.1007/s12034-017-1443-8
Published Online: 2017-08-21
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hlali, S
Hizem, N
Kalboussi, A
License valid from 2017-08-21