On the structural and electrical properties of metal–ferroelectric–high k dielectric–silicon structure for non-volatile memory applications
Crossref DOI link: https://doi.org/10.1007/s12034-018-1624-0
Published Online: 2018-07-24
Published Print: 2018-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Singh, Prashant http://orcid.org/0000-0002-4846-554X
Jha, Rajesh Kumar
Singh, Rajat Kumar
Singh, B R
Text and Data Mining valid from 2018-07-24
Article History
Received: 10 August 2017
Accepted: 6 December 2017
First Online: 24 July 2018