Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition
Crossref DOI link: https://doi.org/10.1007/s12034-018-1696-x
Published Online: 2019-01-08
Published Print: 2019-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Karabulut, Abdulkerim
Text and Data Mining valid from 2019-01-08
Article History
Received: 13 February 2018
Accepted: 29 April 2018
First Online: 8 January 2019