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Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

Crossref DOI link: https://doi.org/10.1007/s12034-019-1883-4

Published Online: 2019-06-19

Published Print: 2019-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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