Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN/GaN MOSHEMT
Crossref DOI link: https://doi.org/10.1007/s12043-016-1310-y
Published Online: 2016-12-02
Published Print: 2017-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
SWAIN, R
JENA, K
LENKA, T R
License valid from 2016-12-02