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High-mobility air-stable n-type field-effect transistors based on large-area solution-processed organic single-crystal arrays

Crossref DOI link: https://doi.org/10.1007/s12274-017-1699-8

Published Online: 2017-07-29

Published Print: 2018-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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