Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors
Crossref DOI link: https://doi.org/10.1007/s12274-018-2106-9
Published Online: 2018-06-14
Published Print: 2018-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zhou, Ziyao
Lan, Changyong
Yip, SenPo
Wei, Renjie
Li, Dapan
Shu, Lei
Ho, Johnny C.
Text and Data Mining valid from 2018-06-14
Article History
Received: 7 March 2018
Revised: 26 April 2018
Accepted: 22 May 2018
First Online: 14 June 2018