Document is current

Any future updates will be listed below

Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

Crossref DOI link: https://doi.org/10.1007/s12274-018-2193-7

Published Online: 2018-09-22

Published Print: 2019-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark