Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors
Crossref DOI link: https://doi.org/10.1007/s12274-019-2434-4
Published Online: 2019-05-22
Published Print: 2019-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Li, Fangzhou
Yip, SenPo
Dong, Ruoting
Zhou, Ziyao
Lan, Changyong
Liang, Xiaoguang
Li, Dapan
Meng, You
Kang, Xiaolin
Ho, Johnny C.
Text and Data Mining valid from 2019-05-22
Version of Record valid from 2019-05-22
Article History
Received: 21 March 2019
Revised: 30 April 2019
Accepted: 10 May 2019
First Online: 22 May 2019