Crossmark

Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer

Published Online: 2020-07-03

Published Print: 2021-06

Authors

Huang, Hao

Guan, Hongming

Su, Meng

Zhang, Xiaoyue

Liu, Yuan

Liu, Chuansheng

Zhang, Zhihong

Liu, Kaihui

Liao, Lei

Tang, Ning
License Information

Text and Data Mining valid from 2020-07-03

Version of Record valid from 2020-07-03
More Information

Article History

Received: 10 February 2020

Revised: 25 March 2020

Accepted: 5 June 2020

First Online: 3 July 2020

Document is current