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The origin of gate bias stress instability and hysteresis in monolayer WS2 transistors

Published Online: 2020-09-05

Published Print: 2020-12

Authors

Lan, Changyong

Kang, Xiaolin

Meng, You

Wei, Renjie

Bu, Xiuming

Yip, SenPo

Ho, Johnny C.
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Text and Data Mining valid from 2020-09-05

Version of Record valid from 2020-09-05
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Article History

Received: 23 June 2020

Revised: 16 July 2020

Accepted: 20 July 2020

First Online: 5 September 2020

Document is current