Ferroelectric-gated ReS2 field-effect transistors for nonvolatile memory
Crossref DOI link: https://doi.org/10.1007/s12274-022-4142-8
Published Online: 2022-03-29
Published Print: 2022-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Liu, Li
Wang, Hao
Wu, Qilong
Wu, Kang
Tian, Yuan
Yang, Haitao
Shen, Cheng Min
Bao, Lihong
Qin, Zhihui
Gao, Hong-Jun
Text and Data Mining valid from 2022-03-29
Version of Record valid from 2022-03-29
Article History
Received: 18 October 2021
Revised: 29 December 2021
Accepted: 10 January 2022
First Online: 29 March 2022