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Investigation of breakdown voltage and safe operating area dependence on step gate oxide profile in $$\beta$$-Ga$$_2$$O$$_3$$ junctionless field-effect transistors

Crossref DOI link: https://doi.org/10.1007/s12572-025-00417-7

Published Online: 2025-11-17

Published Print: 2025-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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