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An engineered barrier Mid-IR nBn photodetector based on III-Antimonide semiconductor alloys and its applications to use as a high-photoresponsivity optical device in multiple gas detection

Crossref DOI link: https://doi.org/10.1007/s12596-024-01832-y

Published Online: 2024-05-04

Published Print: 2025-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Shaveisi, Maryam

Aliparast, Peiman
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Text and Data Mining valid from 2024-05-04

Version of Record valid from 2024-05-04
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Article History

Received: 18 August 2023

Accepted: 7 April 2024

First Online: 4 May 2024

Declarations

:

: Not applicable.

: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the study reported in this paper.

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