Fabrication and characterization of a visible photodetector based on a germanium/n-type silicon heterojunction using thermal evaporation deposition
Crossref DOI link: https://doi.org/10.1007/s12596-024-02033-3
Published Online: 2024-07-17
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Fahad, Othman Abed
Ramizy, Asmiet
AlRawi, Bilal K.
Text and Data Mining valid from 2024-07-17
Version of Record valid from 2024-07-17
Article History
Received: 26 May 2024
Accepted: 30 June 2024
First Online: 17 July 2024