Crossmark

Rapidly counting atomic planes of ultra‐thin MoSe <sub>2</sub> nanosheets (1 ≤ <i>n</i> ≤ 4) on SiO <sub>2</sub> /Si substrate

Crossref DOI link: https://doi.org/10.1007/s12598-016-0776-6

Published Online: 2016-06-20

Published Print: 2016-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Wang, Yi‐Ping

Zhou, Hui‐Jun

Zhao, Gui‐Hua

Xia, Tian‐Long

Wang, Lei

Wang, Le https://orcid.org/0000-0002-0748-6168
Zhang, Li‐Yuan
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (CN) (11304381)

National Natural Science Foundation of China (CN) (11004245)

National Natural Science Foundation of China (CN) (11174366)

National Natural Science Foundation of China (CN) (51202200)

National Natural Science Foundation of China (11304381)

National Natural Science Foundation of China (11004245)

National Natural Science Foundation of China (11174366)

National Natural Science Foundation of China (51202200)
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License valid from 2016-06-20