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Improving interfacial and electrical properties of HfO <sub>2</sub> /SiO <sub>2</sub> /p‐Si stacks with N <sub>2</sub> ‐plasma‐treated SiO <sub>2</sub> interfacial layer

Crossref DOI link: https://doi.org/10.1007/s12598-017-0958-x

Published Online: 2017-10-26

Published Print: 2023-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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