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Promising high‐thermal‐conductivity substrate material for high‐power electronic device: silicon nitride ceramics

Crossref DOI link: https://doi.org/10.1007/s12598-020-01376-7

Published Online: 2020-02-19

Published Print: 2020-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Hu, Feng

Xie, Zhi‐Peng https://orcid.org/0000-0003-0817-1843
Zhang, Jian

Hu, Zun‐Lan

An, Di
Funding

Funding for this research was provided by:

National Key Research and Development Program of China (2017YFB0310400)

National Natural Science Foundation of China (51427802)

National Key Research and Development Program of China (2017YFB0310400)

National Natural Science Foundation of China (51427802)
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Text and Data Mining valid from 2020-02-19

Text and Data Mining valid from 2020-02-19

Version of Record valid from 2020-02-19
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Article History

Received: 9 April 2019

Revised: 20 July 2019

Accepted: 18 January 2020

First Online: 19 February 2020