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X‐ray irradiation‐induced degradation in Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> fully depleted silicon‐on‐insulator n‐type metal oxide semiconductor field‐effect transistors

Crossref DOI link: https://doi.org/10.1007/s12598-020-01586-z

Published Online: 2020-09-24

Published Print: 2021-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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