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Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field‐effect transistors using 3‐nm ferroelectric Hf 0.5 Zr 0.5 O 2

Crossref DOI link: https://doi.org/10.1007/s12598-024-02674-0

Published Online: 2024-07

Published Print: 2024-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhang, Zhao‐Hao

Luo, Yan‐Na

Xu, Gao‐Bo

Yao, Jia‐Xin

Wu, Zhen‐Hua

Zhao, Hong‐Bin

Zhang, Qing‐Zhu https://orcid.org/0000-0003-0035-0652
Yin, Hua‐Xiang https://orcid.org/0000-0001-8066-6002
Luo, Jun

Wang, Wen‐Wu

Tu, Hai‐Ling
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (61904194, 91964202, 92064003)

Youth Innovation Promotion Association of the Chinese Academy of Sciences (2023130, Y9YQ01R004)

Beijing Municipal Science and Technology Commission, Administrative Commission of Zhongguancun Science Park (Z201100006820084)

National Natural Science Foundation of China (61904194, 91964202, 92064003)

Youth Innovation Promotion Association, Chinese Academy of Sciences (2023130, Y9YQ01R004)
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Text and Data Mining valid from 2024-07-01

Version of Record valid from 2024-04-25
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Article History

Received: 26 April 2023

Revised: 24 June 2023

Accepted: 2 July 2023

First Online: 25 April 2024

Declarations

:

: The authors declare that they have no conflict of interest.

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