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Enhanced quality of Al <sub>2</sub> O <sub>3</sub> /SiC gate stack via microwave plasma annealing

Crossref DOI link: https://doi.org/10.1007/s12598-024-02781-y

Published Online: 2024-06-07

Published Print: 2024-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

You, Nan‐Nan

Liu, Xin‐Yu

Zhang, Qian

Wang, Zhen

Wang, Jia‐Yi

Xu, Yang

Li, Xiu‐Yan

Guo, Yu‐Zheng https://orcid.org/0000-0001-9224-3816
Wang, Sheng‐Kai https://orcid.org/0000-0002-9701-5107
Funding

Funding for this research was provided by:

Natural Science Foundation of Beijing Municipality (4234091)

National Natural Science Foundation of China (62174122)

National Natural Science Foundation of China (62174176)

National Natural Science Foundation of China (62304245)

Beijing Municipal Natural Science Foundation (4234091)

National Natural Science Foundation of China (62174122)

National Natural Science Foundation of China (62174176)

National Natural Science Foundation of China (62304245)

Out-standing Member Project of the Youth Innovation Promotion Association of CAS (Y2021046)

Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20200039)
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Article History

Received: 5 December 2023

Revised: 29 January 2024

Accepted: 3 February 2024

First Online: 7 June 2024

Declarations

:

: The authors declare that they have no conflict of interest.