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Effect of Pressure on Bonding Environment and Carrier Transport of a-Si:H Thin Films Deposited Using 27.12 MHz Assisted PECVD Process

Crossref DOI link: https://doi.org/10.1007/s12633-015-9374-8

Published Online: 2016-02-05

Published Print: 2018-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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