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Analytical Study of Effect of Channel Doping on Threshold Voltage of Metal Gate High-k SiGe MOSFET

Crossref DOI link: https://doi.org/10.1007/s12633-017-9631-0

Published Online: 2017-11-27

Published Print: 2018-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy