A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices
Crossref DOI link: https://doi.org/10.1007/s12633-017-9648-4
Published Online: 2017-12-27
Published Print: 2018-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Maity, N. P.
Maity, Reshmi
Baishya, S.
Funding for this research was provided by:
Department of Science and Technology (Govt. of INDIA) (SR/FTP/ETA-50)
License valid from 2017-12-27