The Variation of Crystalline Structure Induced by Gas Dilution and Thermal Annealing in Silicon Layers Deposited by PECVD Technique
Crossref DOI link: https://doi.org/10.1007/s12633-018-0025-8
Published Online: 2018-12-07
Published Print: 2019-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
El Arbi, N.
Jemai, R.
Khirouni, K.
Khemakhem, H.
Text and Data Mining valid from 2018-12-07
Article History
Received: 18 July 2018
Accepted: 19 November 2018
First Online: 7 December 2018