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Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure

Published Online: 2018-04-24

Published Print: 2019-02

Authors

Reddy, N. Nanda Kumar

Akkera, Harish Sharma

Sekhar, M. Chandra

Uthanna, S.
Funding

Funding for this research was provided by:

DST FIST (SR/FST/College-263)
License Information

Text and Data Mining valid from 2018-04-24
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Article History

Received: 12 December 2017

Accepted: 27 March 2018

First Online: 24 April 2018

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