Effect of Ge Mole Fraction on Electrical Parameters of Si1−xGex Source Step-FinFET and its Application as an Inverter
Crossref DOI link: https://doi.org/10.1007/s12633-018-9846-8
Published Online: 2018-04-21
Published Print: 2019-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Saha, Rajesh
Bhowmick, Brinda
Baishya, Srimanta
Text and Data Mining valid from 2018-04-21
Article History
Received: 18 July 2016
Accepted: 28 March 2018
First Online: 21 April 2018