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Effect of Annealing Temperature on Structural and Electrical Properties of Al/ZrO2/p-Si MIS Schottky Diodes

Crossref DOI link: https://doi.org/10.1007/s12633-018-9938-5

Published Online: 2018-06-29

Published Print: 2019-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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