An Asymmetric Nanoscale SOI MOSFET by Means of a P-N Structure as Virtual Hole’s Well at the Source Side
Crossref DOI link: https://doi.org/10.1007/s12633-018-9956-3
Published Online: 2018-07-31
Published Print: 2019-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ramezani, Zeinab
Orouji, Ali A. http://orcid.org/0000-0002-8664-6069
Text and Data Mining valid from 2018-07-31
Article History
Received: 9 February 2018
Accepted: 18 July 2018
First Online: 31 July 2018