Reduction in Self-Heating Effect of SOI MOSFETs by Three Vertical 4H-SiC Layers in the BOX
Crossref DOI link: https://doi.org/10.1007/s12633-019-00191-9
Published Online: 2019-06-14
Published Print: 2020-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tahne, Behrooz Abdi
Naderi, Ali http://orcid.org/0000-0001-9891-9805
Heirani, Fatemeh
Text and Data Mining valid from 2019-06-14
Version of Record valid from 2019-06-14
Article History
Received: 25 March 2019
Accepted: 21 May 2019
First Online: 14 June 2019