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A Simulation Study of Junctionless Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Symmetrical Side Gates

Crossref DOI link: https://doi.org/10.1007/s12633-019-00258-7

Published Online: 2019-09-02

Published Print: 2020-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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