Improvement of Subthreshold Characteristics of Dopingless Tunnel FET Using Hetero Gate Dielectric Material: Analytical Modeling and Simulation
Crossref DOI link: https://doi.org/10.1007/s12633-019-00314-2
Published Online: 2019-12-12
Published Print: 2020-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
G, Lakshmi Priya http://orcid.org/0000-0003-2734-4914
N B, Balamurugan
Text and Data Mining valid from 2019-12-12
Version of Record valid from 2019-12-12
Article History
Received: 26 July 2019
Accepted: 25 October 2019
First Online: 12 December 2019