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Embedding Two P+ Pockets in the Buried Oxide of Nano Silicon on Insulator MOSFETs: Controlled Short Channel Effects and Electric Field

Crossref DOI link: https://doi.org/10.1007/s12633-019-00358-4

Published Online: 2019-12-18

Published Print: 2020-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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