Extensive Study of Underlap Length Effect for 3-D SOI FinFET to Achieve High Switching Ratio and Low Power
Crossref DOI link: https://doi.org/10.1007/s12633-020-00495-1
Published Online: 2020-05-28
Published Print: 2021-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Samal, Asharani
Pradhan, Kumar Prasannajit http://orcid.org/0000-0002-7313-294X
Mohapatra, Sushanta Kumar
Text and Data Mining valid from 2020-05-28
Version of Record valid from 2020-05-28
Article History
Received: 9 March 2020
Accepted: 22 April 2020
First Online: 28 May 2020