Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications
Crossref DOI link: https://doi.org/10.1007/s12633-020-00503-4
Published Online: 2020-05-28
Published Print: 2021-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Godfrey, D.
Nirmal, D. http://orcid.org/0000-0002-9751-2816
Godwinraj, D.
Arivazhagan, L.
MohanKumar, N.
Tzou, Jerry
Yeh, Wen-Kuan
Text and Data Mining valid from 2020-05-28
Version of Record valid from 2020-05-28
Article History
Received: 7 February 2020
Accepted: 28 April 2020
First Online: 28 May 2020