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Analysis of D.C Parameters of Short-Channel Heterostructure Double Gate Junction-Less MOSFET Circuits Considering Quantum Mechanical Effects

Crossref DOI link: https://doi.org/10.1007/s12633-020-00507-0

Published Online: 2020-06-08

Published Print: 2021-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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