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Subthreshold Performance Improvement of Underlapped FinFET Using Workfunction Modulated Dual-metal Gate Technique

Crossref DOI link: https://doi.org/10.1007/s12633-020-00550-x

Published Online: 2020-06-17

Published Print: 2021-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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