Improved Drain Current Characteristics of Germanium Source Triple Material Double Gate Hetero-Dielectric Stacked TFET for Low Power Applications
Crossref DOI link: https://doi.org/10.1007/s12633-020-00556-5
Published Online: 2020-08-07
Published Print: 2021-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rani, C. Sheeja Herobin
Bagan, K. Bhoopathy
Roach, R. Solomon
Text and Data Mining valid from 2020-08-07
Version of Record valid from 2020-08-07
Article History
Received: 13 January 2020
Accepted: 11 June 2020
First Online: 7 August 2020