Center Potential Based Analysis of Si and III-V Gate all around Field Effect Transistors (GAA-FETs)
Crossref DOI link: https://doi.org/10.1007/s12633-020-00559-2
Published Online: 2020-07-06
Published Print: 2021-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Verma, Yogesh Kumar https://orcid.org/0000-0002-6216-7290
Gupta, Santosh Kumar
Text and Data Mining valid from 2020-07-06
Version of Record valid from 2020-07-06
Article History
Received: 25 April 2020
Accepted: 11 June 2020
First Online: 6 July 2020