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An Analytical Model Including Interface Traps and Temperature Effects in Negative Capacitance Double Gate Field Effect Transistor

Published Online: 2020-08-28

Published Print: 2021-09

Authors

Dong, Yibiao

Han, Ru https://orcid.org/0000-0001-6373-6056
Wang, Danghui

Wang, Ruofei

Guo, Chenmeng
Funding

Funding for this research was provided by:

Education exploratory reform project (Course No. U10M11113.03)
License Information

Text and Data Mining valid from 2020-08-28

Version of Record valid from 2020-08-28
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Article History

Received: 11 February 2020

Accepted: 10 August 2020

First Online: 28 August 2020

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