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An Improved 4H-SiCMESFET with Un-Doped and Recessed Area under the Gate for High Power Applications

Crossref DOI link: https://doi.org/10.1007/s12633-020-00699-5

Published Online: 2020-09-13

Published Print: 2021-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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