Silicon Nitride Back Barrier in AlGaN/GaN HEMT to Enhance Breakdown Voltage for Satellite Applications
Crossref DOI link: https://doi.org/10.1007/s12633-020-00817-3
Published Online: 2020-11-24
Published Print: 2021-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Janakiraman, V.
Baskaran, S.
Kumutha, D.
Text and Data Mining valid from 2020-11-24
Version of Record valid from 2020-11-24
Article History
Received: 29 July 2020
Accepted: 28 October 2020
First Online: 24 November 2020