Performance Analysis of Group IV Material Based Tunnel Field Effect Transistor: Effect of Drain Splitting and Introducing Ge-Strip at Source- Channel Junction
Crossref DOI link: https://doi.org/10.1007/s12633-020-00824-4
Published Online: 2020-11-21
Published Print: 2022-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kumar, Surender http://orcid.org/0000-0001-5967-4550
Mehra, Rajesh
Yadav, Harsh
Basu, Rikmantra
Text and Data Mining valid from 2020-11-21
Version of Record valid from 2020-11-21
Article History
Received: 26 September 2020
Accepted: 3 November 2020
First Online: 21 November 2020
Compliance with Ethical Standards
:
: The authors declare that they have no conflict of interest.