Dual Metal Gate Dielectric Engineered Dopant Segregated Schottky Barrier MOSFET With Reduction in Ambipolar Current
Crossref DOI link: https://doi.org/10.1007/s12633-020-00921-4
Published Online: 2021-01-06
Published Print: 2022-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kale, Sumit http://orcid.org/0000-0001-9761-9632
Chandu, Madduri Sai
Text and Data Mining valid from 2021-01-06
Version of Record valid from 2021-01-06
Article History
Received: 19 October 2020
Revised: 19 October 2020
Accepted: 22 December 2020
First Online: 6 January 2021