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A Unified Model of Drain Current Local Variability due to Channel Length Fluctuation for an n-channel Eδ DC MOS Transistor

Published Online: 2021-07-31

Published Print: 2022-06

Authors

Sengupta, Sarmista

Pandit, Soumya
Funding

Funding for this research was provided by:

SMDP-C2SD
License Information

Text and Data Mining valid from 2021-07-31

Version of Record valid from 2021-07-31
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Article History

Received: 26 January 2021

Accepted: 15 June 2021

First Online: 31 July 2021

Declarations

:

: The Authors transfer the non-exclusive publication rights and they warrants that their contribution is original and that they have full power to make this grant.

: The authors declare that they have no conflict of interest.

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