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Ultra Steep Ge-Source Dopingless Tunnelling Field Effect Transistor with Enhanced Drive Current: DC to Linearity Characteristics Analysis

Published Online: 2021-09-10

Published Print: 2022-07

Authors

Priyadarshani, Kumari Nibha

Singh, Sangeeta

Singh, Kunal https://orcid.org/0000-0002-6795-0997
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Text and Data Mining valid from 2021-09-10

Version of Record valid from 2021-09-10
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Article History

Received: 15 June 2021

Accepted: 18 August 2021

First Online: 10 September 2021

Declarations

:

: Not applicable.

: <b>Author’s name</b>Kumari Nibha Priyadarshani.Sangeeta Singh.Kunal Singh.<b>Affiliation</b>National Institute of Technology Patna, India.National Institute of Technology Patna, India.National Institute of Technology Jamshedpur, India.

: The authors declare that there are no conflicts of interest related to this article.

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